Trans GP BJT PNP 20V 3.5A Automotive 6Pin SOT-23 T/R
Bipolar BJT Transistor PNP 20V 3.5A 110MHz 1.1W Surface Mount SOT-23-6
得捷:
TRANS PNP 20V 3.5A SOT23-6
艾睿:
If you require a general purpose BJT that can handle high voltages, then the PNP ZX5T2E6TA BJT, developed by Diodes Zetex, is for you. This bipolar junction transistor&s;s maximum emitter base voltage is 7.5 V. Its maximum power dissipation is 1700 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 7.5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans GP BJT PNP 20V 3.5A 6-Pin SOT-23 T/R
Chip1Stop:
Trans GP BJT PNP 20V 3.5A 6-Pin SOT-23 T/R
Verical:
Trans GP BJT PNP 20V 3.5A Automotive 6-Pin SOT-23 T/R
Win Source:
TRANS PNP 20V 3.5A SOT23-6
DeviceMart:
TRANS PNP 20V LOW SAT SOT23-6
频率 110 MHz
极性 PNP
耗散功率 1.7 W
击穿电压集电极-发射极 20 V
集电极最大允许电流 3.5A
最小电流放大倍数hFE 300 @1A, 2V
最大电流放大倍数hFE 300 @10mA, 2V
额定功率Max 1.1 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1700 mW
安装方式 Surface Mount
引脚数 6
封装 SOT-23-6
封装 SOT-23-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
ZX5T2E6TA Diodes 美台 | 当前型号 | 当前型号 |
ZXTP2006E6TA 美台 | 类似代替 | ZX5T2E6TA和ZXTP2006E6TA的区别 |