ZXTN2010GTA

DIODES INC.  ZXTN2010GTA  单晶体管 双极, NPN, 80 V, 130 MHz, 1.6 W, 6 A, 200 hFE

- 双极 BJT - 单 NPN 60 V 6 A 130MHz 3 W 表面贴装型 SOT-223-3

得捷:
TRANS NPN 60V 6A SOT223-3

立创商城:
NPN 60V 6A

e络盟:
单晶体管 双极, NPN, 80 V, 130 MHz, 1.6 W, 6 A, 200 hFE

艾睿:
Jump-start your electronic circuit design with this versatile NPN ZXTN2010GTA GP BJT from Diodes Zetex. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Allied Electronics:
Transistor, NPN, 6A, 60V, SOT223

安富利:
Trans GP BJT NPN 60V 6A 4-Pin3+Tab SOT-223 T/R

Chip1Stop:
Trans GP BJT NPN 60V 6A 4-Pin3+Tab SOT-223 T/R

TME:
Transistor: NPN; bipolar; 60V; 6A; 1.6W; SOT223

Verical:
Trans GP BJT NPN 60V 6A 3000mW 4-Pin3+Tab SOT-223 T/R

Newark:
# DIODES INC.  ZXTN2010GTA  Bipolar BJT Single Transistor, NPN, 80 V, 130 MHz, 1.6 W, 6 A, 200 hFE

儒卓力:
**NPN TRANSISTOR 60V 6A SOT223 **

DeviceMart:
TRANS NPN LO SAT 60V 6A SOT223