MOSFET Dual N/P-Ch 60V 1.8A/1.42A SOIC8
MOSFET - 阵列 2 个 N 通道和 2 个 P 通道(H 桥) 60V 1.39A,1.28A 870mW 表面贴装型 8-SO
得捷:
MOSFET 2N/2P-CH 60V 8-SOIC
立创商城:
ZXMHC6A07N8TC
贸泽:
MOSFET Mosfet H-Bridge 60/-60V 1.8/-1.4A
艾睿:
Compared to traditional transistors, ZXMHC6A07N8TC power MOSFETs, developed by Diodes Zetex, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1360 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N|P channel MOSFET transistor operates in enhancement mode.
Allied Electronics:
MOSFET Dual N/P-Ch 60V 1.8A/1.42A SOIC8
安富利:
Trans MOSFET N/P-CH 60V 1.8A/1.42A 8-Pin SO T/R
Chip1Stop:
Trans MOSFET N/P-CH 60V 1.8A/1.42A 8-Pin SO T/R
Verical:
Trans MOSFET N/P-CH 60V 1.39A/1.28A 8-Pin SO T/R
儒卓力:
**H-Br 60V 1A 650mOhm SO-8 **
Win Source:
MOSFET 2N/2P-CH 60V 8-SOIC
DeviceMart:
MOSFET COMPL H-BRIDGE 60V 8-SOIC
极性 N+P
耗散功率 0.87 W
漏源极电压Vds 60 V
连续漏极电流Ids 1.8A/1.42A
上升时间 1.4 ns
输入电容Ciss 166pF @40VVds
额定功率Max 870 mW
下降时间 2 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1360 mW
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99