ZXMHC6A07N8TC

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ZXMHC6A07N8TC概述

MOSFET Dual N/P-Ch 60V 1.8A/1.42A SOIC8

MOSFET - 阵列 2 个 N 通道和 2 个 P 通道(H 桥) 60V 1.39A,1.28A 870mW 表面贴装型 8-SO


得捷:
MOSFET 2N/2P-CH 60V 8-SOIC


立创商城:
ZXMHC6A07N8TC


贸泽:
MOSFET Mosfet H-Bridge 60/-60V 1.8/-1.4A


艾睿:
Compared to traditional transistors, ZXMHC6A07N8TC power MOSFETs, developed by Diodes Zetex, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1360 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N|P channel MOSFET transistor operates in enhancement mode.


Allied Electronics:
MOSFET Dual N/P-Ch 60V 1.8A/1.42A SOIC8


安富利:
Trans MOSFET N/P-CH 60V 1.8A/1.42A 8-Pin SO T/R


Chip1Stop:
Trans MOSFET N/P-CH 60V 1.8A/1.42A 8-Pin SO T/R


Verical:
Trans MOSFET N/P-CH 60V 1.39A/1.28A 8-Pin SO T/R


儒卓力:
**H-Br 60V 1A 650mOhm SO-8 **


Win Source:
MOSFET 2N/2P-CH 60V 8-SOIC


DeviceMart:
MOSFET COMPL H-BRIDGE 60V 8-SOIC


ZXMHC6A07N8TC中文资料参数规格
技术参数

极性 N+P

耗散功率 0.87 W

漏源极电压Vds 60 V

连续漏极电流Ids 1.8A/1.42A

上升时间 1.4 ns

输入电容Ciss 166pF @40VVds

额定功率Max 870 mW

下降时间 2 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 1360 mW

封装参数

安装方式 Surface Mount

引脚数 8

封装 SOIC-8

外形尺寸

长度 5 mm

封装 SOIC-8

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

海关信息

ECCN代码 EAR99

数据手册

在线购买ZXMHC6A07N8TC
型号: ZXMHC6A07N8TC
制造商: Diodes 美台
描述:MOSFET Dual N/P-Ch 60V 1.8A/1.42A SOIC8

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