Trans GP BJT PNP 30V 5.5A 2100mW Automotive 4Pin3+Tab SOT-89 T/R
- 双极 BJT - 单 PNP 110MHz 表面贴装型 SOT-89-3
得捷:
TRANS PNP 30V 5.5A SOT89-3
立创商城:
PNP 30V 5.5A
艾睿:
Implement this PNP ZXTP2008ZTA GP BJT from Diodes Zetex to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2100 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
Allied Electronics:
Transistor PNP 30V 5.5A SOT89
安富利:
Trans GP BJT PNP 30V 5.5A 4-Pin3+Tab SOT-89 T/R
Chip1Stop:
Trans GP BJT PNP 30V 5.5A 4-Pin3+Tab SOT-89 T/R
Verical:
Trans GP BJT PNP 30V 5.5A Automotive 4-Pin3+Tab SOT-89 T/R
儒卓力:
**PNP TRANSISTOR 30V 5,5A SOT89 **
Win Source:
TRANS PNP 30V 5.5A SOT89
频率 110 MHz
额定电压DC -30.0 V
额定电流 -5.50 A
极性 PNP
耗散功率 2.1 W
击穿电压集电极-发射极 30 V
集电极最大允许电流 5.5A
最小电流放大倍数hFE 100 @1A, 1V
额定功率Max 2.1 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2100 mW
安装方式 Surface Mount
引脚数 4
封装 SOT-89-3
封装 SOT-89-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
ZXTP2008ZTA Diodes 美台 | 当前型号 | 当前型号 |
PBSS5350X@115 恩智浦 | 功能相似 | ZXTP2008ZTA和PBSS5350X@115的区别 |
PBSS5250X@135 恩智浦 | 功能相似 | ZXTP2008ZTA和PBSS5250X@135的区别 |
PBSS5350X@135 恩智浦 | 功能相似 | ZXTP2008ZTA和PBSS5350X@135的区别 |