ZXMP10A18 系列 100 V 0.15 Ohm P 沟道 增强模式 MOSFET - DPAK
P-Channel 100 V 0.15 Ohm Surface Mount Enhancement Mode MOSFET - DPAK
得捷:
MOSFET P-CH 100V 3.8A TO252-3
立创商城:
P沟道 100V 3.8A
贸泽:
MOSFET P-Ch 100 Volt 5.2A
e络盟:
功率场效应管, MOSFET, P沟道, 100 V, 5.9 A, 0.15 ohm, TO-252 DPAK, 表面安装
艾睿:
Create an effective common drain amplifier using this ZXMP10A18KTC power MOSFET from Diodes Zetex. Its maximum power dissipation is 10200 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device is made with tmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
Allied Electronics:
MOSFET P-Channel 100V 5.9A DPAK
安富利:
Trans MOSFET P-CH 100V 5.9A 3-Pin2+Tab DPAK T/R
Chip1Stop:
Trans MOSFET P-CH 100V 5.9A Automotive 3-Pin2+Tab DPAK T/R
Verical:
Trans MOSFET P-CH 100V 5.9A Automotive 3-Pin2+Tab DPAK T/R
Newark:
# DIODES INC. ZXMP10A18KTC MOSFET Transistor, P Channel, -5.9 A, -100 V, 150 mohm, -10 V, -4 V
儒卓力:
**P-CH 100V 6A 150mOhm TO252-3 **
Win Source:
MOSFET P-CH 100V 3.8A DPAK
DeviceMart:
MOSFET P-CHAN 100V DPAK
通道数 1
针脚数 3
漏源极电阻 0.15 Ω
极性 P-Channel
耗散功率 4.3 W
阈值电压 4 V
漏源极电压Vds 100 V
漏源击穿电压 100 V
连续漏极电流Ids 5.9A
上升时间 6.8 ns
输入电容Ciss 1055pF @50VVds
额定功率Max 2.17 W
下降时间 17.9 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 10200 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.39 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 军用与航空, 国防, 电机驱动与控制, 车用, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
军工级 Yes
REACH SVHC版本 2015/12/17
ECCN代码 EAR99