ZXMP10A18GTA 编带
ZXMP10A18 Series 100 V 0.15 Ohm P-Channel Enhancement Mode MOSFET - SOT-223
得捷:
MOSFET P-CH 100V 2.6A SOT223
立创商城:
P沟道 100V 2.6A
e络盟:
晶体管, MOSFET, 增强模式, P沟道, -2.6 A, -100 V, 0.15 ohm, -10 V, -2 V
艾睿:
Make an effective common source amplifier using this ZXMP10A18GTA power MOSFET from Diodes Zetex. Its maximum power dissipation is 3900 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Allied Electronics:
MOSFET P-Channel 100V 3.7A SOT223
安富利:
Trans MOSFET P-CH 100V 3.7A 4-Pin3+Tab SOT-223 T/R
Chip1Stop:
Trans MOSFET P-CH 100V 3.7A 4-Pin3+Tab SOT-223 T/R
TME:
Transistor: P-MOSFET; unipolar; -100V; -3A; 2W; SOT223
Verical:
Trans MOSFET P-CH 100V 3.7A Automotive 4-Pin3+Tab SOT-223 T/R
Newark:
# DIODES INC. ZXMP10A18GTA MOSFET Transistor, Enhancement Mode, P Channel, -2.6 A, -100 V, 0.15 ohm, -10 V, -2 V
DeviceMart:
MOSFET P-CH 100V 2.6A SOT223
额定电压DC -100 V
额定电流 -3.70 A
针脚数 4
漏源极电阻 0.15 Ω
极性 P-Channel
耗散功率 2 W
漏源极电压Vds 100 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 3.70 A
上升时间 6.8 ns
输入电容Ciss 1055pF @50VVds
额定功率Max 2 W
下降时间 17.9 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2W Ta
安装方式 Surface Mount
引脚数 4
封装 TO-261-4
封装 TO-261-4
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 军用与航空, 车用, 电机驱动与控制, 国防, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
军工级 Yes
REACH SVHC版本 2015/12/17