



Trans GP BJT PNP 30V 4.5A Automotive 3Pin E-Line
- 双极 BJT - 单 PNP 100MHz 通孔 E-Line(TO-92 兼容)
得捷:
TRANS PNP 30V 4.5A E-LINE
艾睿:
The three terminals of this PNP ZTX949 GP BJT from Diodes Zetex give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C.
安富利:
Trans GP BJT PNP 30V 4.5A 3-Pin E-Line
Chip1Stop:
Trans GP BJT PNP 30V 4.5A 3-Pin E-Line
Win Source:
TRANS PNP 30V 4.5A E-LINE
额定电压DC -30.0 V
额定电流 -4.50 A
极性 PNP
耗散功率 1200 mW
击穿电压集电极-发射极 30 V
集电极最大允许电流 4.5A
最小电流放大倍数hFE 100 @1A, 1V
额定功率Max 1.58 W
工作温度Max 200 ℃
工作温度Min -55 ℃
耗散功率Max 1200 mW
安装方式 Through Hole
引脚数 3
封装 TO-226-3
封装 TO-226-3
材质 Silicon
工作温度 -55℃ ~ 200℃
产品生命周期 Active
包装方式 Bulk
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
ZTX949 Diodes 美台 | 当前型号 | 当前型号 |
ZTX949STZ 美台 | 类似代替 | ZTX949和ZTX949STZ的区别 |
ZTX949STOA 美台 | 功能相似 | ZTX949和ZTX949STOA的区别 |