三极管
三极管
得捷:
TRANS NPN 60V 6A SOT223-3
立创商城:
NPN 60V 6A
贸泽:
Bipolar Transistors - BJT NPN 60V
e络盟:
# DIODES INC. ZX5T851GTA 单晶体管 双极, NPN, 60 V, 130 MHz, 1.6 W, 6 A, 200 hFE
艾睿:
Jump-start your electronic circuit design with this versatile NPN ZX5T851GTA GP BJT from Diodes Zetex. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
Allied Electronics:
60V NPN Low Saturation Transistor SOT223
Chip1Stop:
Trans GP BJT NPN 60V 6A 4-Pin3+Tab SOT-223 T/R
Verical:
Trans GP BJT NPN 60V 6A Automotive 4-Pin3+Tab SOT-223 T/R
Newark:
Bipolar BJT Single Transistor, NPN, 60 V, 130 MHz, 1.6 W, 6 A, 200 hFE
DeviceMart:
TRANSISTOR NPN 60V 6000MA SOT223
Win Source:
TRANS NPN 60V 6A SOT223
频率 130 MHz
额定电压DC 60.0 V
额定电流 6.00 A
额定功率 3 W
针脚数 4
极性 NPN
耗散功率 3000 mW
增益频宽积 130 MHz
击穿电压集电极-发射极 60 V
集电极最大允许电流 6A
最小电流放大倍数hFE 100 @2A, 1V
额定功率Max 3 W
直流电流增益hFE 200
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 3 W
安装方式 Surface Mount
引脚数 4
封装 TO-261-4
长度 6.7 mm
宽度 3.7 mm
高度 1.65 mm
封装 TO-261-4
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
ZX5T851GTA Diodes 美台 | 当前型号 | 当前型号 |
ZXTN2010GTA 美台 | 类似代替 | ZX5T851GTA和ZXTN2010GTA的区别 |
DZT851-13 美台 | 类似代替 | ZX5T851GTA和DZT851-13的区别 |