ZXTD619MCTA

2个NPN 50V 1.5W 100nA

- 双极 BJT - 阵列 2 NPN（双） 50V 4A 100MHz 1.7W 表面贴装型 W-DFN3020-8

得捷:
TRANS 2NPN 50V 4A 8DFN

立创商城:
2个NPN 50V 4A

艾睿:
Use this versatile NPN ZXTD619MCTA GP BJT from Diodes Zetex to design various electronic circuits. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2450 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 7 V.

安富利:
Trans GP BJT NPN 50V 4A 8-Pin DFN EP T/R

Chip1Stop:
Trans GP BJT NPN 50V 4A 8-Pin DFN EP T/R

Verical:
Trans GP BJT NPN 50V 4A Automotive 8-Pin DFN EP T/R

DeviceMart:
TRANS ARRAY 2NPN 50V 4A DFN