ZXTD617MCTA

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ZXTD617MCTA概述

Trans GP BJT NPN 15V 5A 2450mW Automotive 8Pin DFN EP T/R

Bipolar BJT Transistor Array 2 NPN Dual 15V 5A 80MHz 1.7W Surface Mount W-DFN3020-8


得捷:
TRANS 2NPN 15V 4.5A 8DFN


贸泽:
Bipolar Transistors - BJT Dual 15V NPN Low Sat 4.5A Ic 100mV 45mOhm


艾睿:
Do you require a transistor in your circuit operating in the high-voltage range? This NPN ZXTD617MCTA general purpose bipolar junction transistor, developed by Diodes Zetex, is your solution. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2450 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 15 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.


安富利:
Trans GP BJT NPN 15V 5A 8-Pin DFN EP T/R


Chip1Stop:
Trans GP BJT NPN 15V 5A 8-Pin DFN EP T/R


Verical:
Trans GP BJT NPN 15V 5A Automotive 8-Pin DFN EP T/R


DeviceMart:
TRANS ARR 2NPN 15V 4.5A DFN


Win Source:
TRANS 2NPN 15V 4.5A 8DFN


ZXTD617MCTA中文资料参数规格
技术参数

频率 120 MHz

极性 NPN

耗散功率 2.45 W

增益频宽积 120 MHz

击穿电压集电极-发射极 15 V

集电极最大允许电流 5A

最小电流放大倍数hFE 200 @3A, 2V

最大电流放大倍数hFE 415 @10mA, 2V

额定功率Max 1.7 W

工作温度Max 150 ℃

工作温度Min 55 ℃

耗散功率Max 2450 mW

封装参数

安装方式 Surface Mount

引脚数 8

封装 DFN-8

外形尺寸

封装 DFN-8

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

数据手册

在线购买ZXTD617MCTA
型号: ZXTD617MCTA
制造商: Diodes 美台
描述:Trans GP BJT NPN 15V 5A 2450mW Automotive 8Pin DFN EP T/R
替代型号ZXTD617MCTA
型号/品牌 代替类型 替代型号对比

ZXTD617MCTA

Diodes 美台

当前型号

当前型号

ZXTDAM832TA

美台

类似代替

ZXTD617MCTA和ZXTDAM832TA的区别

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