Trans GP BJT NPN 15V 5A 2450mW Automotive 8Pin DFN EP T/R
Bipolar BJT Transistor Array 2 NPN Dual 15V 5A 80MHz 1.7W Surface Mount W-DFN3020-8
得捷:
TRANS 2NPN 15V 4.5A 8DFN
贸泽:
Bipolar Transistors - BJT Dual 15V NPN Low Sat 4.5A Ic 100mV 45mOhm
艾睿:
Do you require a transistor in your circuit operating in the high-voltage range? This NPN ZXTD617MCTA general purpose bipolar junction transistor, developed by Diodes Zetex, is your solution. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2450 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 15 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans GP BJT NPN 15V 5A 8-Pin DFN EP T/R
Chip1Stop:
Trans GP BJT NPN 15V 5A 8-Pin DFN EP T/R
Verical:
Trans GP BJT NPN 15V 5A Automotive 8-Pin DFN EP T/R
DeviceMart:
TRANS ARR 2NPN 15V 4.5A DFN
Win Source:
TRANS 2NPN 15V 4.5A 8DFN
频率 120 MHz
极性 NPN
耗散功率 2.45 W
增益频宽积 120 MHz
击穿电压集电极-发射极 15 V
集电极最大允许电流 5A
最小电流放大倍数hFE 200 @3A, 2V
最大电流放大倍数hFE 415 @10mA, 2V
额定功率Max 1.7 W
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 2450 mW
安装方式 Surface Mount
引脚数 8
封装 DFN-8
封装 DFN-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
ZXTD617MCTA Diodes 美台 | 当前型号 | 当前型号 |
ZXTDAM832TA 美台 | 类似代替 | ZXTD617MCTA和ZXTDAM832TA的区别 |