ZXMC6A09 系列 60 V 5.1 A 2.1 W 互补型 N 和 P 沟道 Mosfet - SOIC-8
MOSFET - 阵列 N 和 P 沟道 60V 3.9A,3.7A 1.8W 表面贴装型 8-SOP
立创商城:
ZXMC6A09DN8TA
得捷:
MOSFET N/P-CH 60V 8-SOIC
贸泽:
MOSFET Comp. 60V NP-Chnl
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the ZXMC6A09DN8TA power MOSFET, developed by Diodes Zetex. Its maximum power dissipation is 2100 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N|P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
Allied Electronics:
MOSFET Dual N/P-Ch 60V 5.1A/4.8A SOIC8
TME:
Transistor: N/P-MOSFET; unipolar; 60/-60V; 4.8/-5.1A; 2.1W; SO8
Verical:
Trans MOSFET N/P-CH 60V 5.1A/4.8A Automotive 8-Pin SO T/R
儒卓力:
**CMOS 60V 5A 45mOhm SO-8 **
DeviceMart:
MOSFET N+P 60V 4.8A 8-SOIC
Win Source:
MOSFET N/P-CH 60V 8-SOIC
额定电流 5.10 A
额定功率 2.1 W
通道数 2
漏源极电阻 70 mΩ
极性 N-Channel, P-Channel
耗散功率 2.1 W
漏源极电压Vds 60 V
漏源击穿电压 60 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 5.10 A
上升时间 5.80 ns
输入电容Ciss 1407pF @40VVds
额定功率Max 1.8 W
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 2100 mW
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99