ZXMN3A06DN8TA 编带
MOSFET - 阵列 2 N-通道(双) 30V 4.9A 1.8W 表面贴装型 8-SO
得捷:
MOSFET 2N-CH 30V 4.9A 8-SOIC
立创商城:
2个N沟道 30V 4.9A
贸泽:
MOSFET Dl 30V N-Chnl UMOS
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the ZXMN3A06DN8TA power MOSFET, developed by Diodes Zetex. Its maximum power dissipation is 2100 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device utilizes tmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
Allied Electronics:
MOSFET Dual N-Channel 30V 6.2A SOIC8
安富利:
Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC T/R
Chip1Stop:
Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC T/R
Verical:
Trans MOSFET N-CH 30V 6.2A Automotive 8-Pin SOIC T/R
Win Source:
MOSFET 2N-CH 30V 4.9A 8-SOIC
额定电压DC 30.0 V
额定电流 4.80 A
通道数 2
漏源极电阻 35 mΩ
极性 N-Channel
耗散功率 2.1 W
阈值电压 1 V
漏源极电压Vds 30 V
漏源击穿电压 30 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 6.20 A
上升时间 6.4 ns
输入电容Ciss 796pF @25VVds
额定功率Max 1.8 W
下降时间 9.4 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2100 mW
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2014/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
ZXMN3A06DN8TA Diodes 美台 | 当前型号 | 当前型号 |
ZXMN3A06DN8TC 美台 | 类似代替 | ZXMN3A06DN8TA和ZXMN3A06DN8TC的区别 |