DIODES INC. ZXMS6006DGTA 晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.075 ohm, 5 V, 1 V
Use Zetex"s power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
输出接口数 1
通道数 1
针脚数 4
漏源极电阻 0.075 Ω
极性 N-Channel
耗散功率 1.3 W
阈值电压 1 V
漏源极电压Vds 60 V
漏源击穿电压 60 V
上升时间 18000 ns
输入电压Min 0 V
输出电流Max 2.8 A
输入数 1
下降时间 15000 ns
工作温度Max 150 ℃
工作温度Min 40 ℃
输入电压 5.5 V
安装方式 Surface Mount
引脚数 4
封装 SOT-223-3
封装 SOT-223-3
工作温度 -40℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99