Trans MOSFET N/P-CH 30V 7.3A/5.3A 8Pin SO T/R
MOSFET - 阵列 N 和 P 沟道 30V 6.8A,4.9A 1.8W 表面贴装型 8-SO
立创商城:
ZXMC3F31DN8TA
得捷:
MOSFET N/P-CH 30V 6.8A/4.9A 8SO
贸泽:
MOSFET 30V S08 Dual MOSFET 20V VBR 4.5V Gate
艾睿:
Make an effective common source amplifier using this ZXMC3F31DN8TA power MOSFET from Diodes Zetex. Its maximum power dissipation is 2100 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N|P channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N/P-CH 30V 7.3A/5.3A 8-Pin SO T/R
TME:
Transistor: N/P-MOSFET; unipolar; 30/-30V; 4.5/-7A; 2.1W; SO8
Verical:
Trans MOSFET N/P-CH 30V 7.3A/5.3A Automotive 8-Pin SO T/R
Win Source:
MOSFET N/P-CH 30V 6.8A/4.9A 8SO
额定功率 2.1 W
通道数 2
极性 N+P
耗散功率 2.1 W
漏源极电压Vds 30 V
连续漏极电流Ids 7.3A/5.3A
输入电容Ciss 608pF @15VVds
额定功率Max 1.8 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2100 mW
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC