ZXT12N20DXTA

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ZXT12N20DXTA概述

ZXT12N20DX 系列 NPN 20 V 3.5 A 1.25 W 双 硅 开关晶体管-MSOP-8

- 双极 BJT - 阵列 2 NPN(双) 20V 3.5A 112MHz 1.04W 表面贴装型 8-MSOP


得捷:
TRANS 2NPN 20V 3.5A 8MSOP


立创商城:
2个NPN 20V 3.5A


艾睿:
If your circuit&s;s specifications require a device that can handle high levels of voltage, Diodes Zetex&s;s NPN ZXT12N20DXTA general purpose bipolar junction transistor is for you. This bipolar junction transistor&s;s maximum emitter base voltage is 7.5 V. Its maximum power dissipation is 1250 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 7.5 V.


安富利:
Trans GP BJT NPN 20V 3.5A 8-Pin MSOP T/R


富昌:
ZXT12N20DX Series NPN 20 V 3.5 A 1.25 W Dual Silicon Switching Transistor-MSOP-8


Chip1Stop:
Trans GP BJT NPN 20V 3.5A 8-Pin MSOP T/R


Verical:
Trans GP BJT NPN 20V 3.5A Automotive 8-Pin MSOP T/R


ZXT12N20DXTA中文资料参数规格
技术参数

频率 112 MHz

额定电压DC 20.0 V

额定电流 3.50 A

极性 NPN

耗散功率 1.25 W

击穿电压集电极-发射极 20 V

集电极最大允许电流 3.5A

最小电流放大倍数hFE 300 @1A, 2V

额定功率Max 1.04 W

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 1250 mW

封装参数

安装方式 Surface Mount

引脚数 8

封装 MSOP-8

外形尺寸

封装 MSOP-8

物理参数

材质 Silicon

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买ZXT12N20DXTA
型号: ZXT12N20DXTA
制造商: Diodes 美台
描述:ZXT12N20DX 系列 NPN 20 V 3.5 A 1.25 W 双 硅 开关晶体管-MSOP-8

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