ZXMN3G32 系列 30 V 0.028 Ohm 双 N 沟道 增强模式 MOSFET - SOIC-8
Mosfet Array 2 N-Channel Dual 30V 5.5A 1.8W Surface Mount 8-SO
得捷:
MOSFET 2N-CH 30V 5.5A 8SOIC
贸泽:
MOSFET 30V Dual N-Channel Enhance. Mode MOSFET
艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Diodes Zetex&s;s ZXMN3G32DN8TA power MOSFET can provide a solution. Its maximum power dissipation is 2100 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans MOSFET N-CH 30V 7.1A 8-Pin SO T/R
Verical:
Trans MOSFET N-CH 30V 7.1A Automotive 8-Pin SOIC T/R
Win Source:
MOSFET 2N-CH 30V 5.5A 8SOIC
DeviceMart:
MOSFET N-CHAN 30V 8SOIC DUAL
极性 Dual N-Channel
耗散功率 2.1 W
漏源极电压Vds 30 V
连续漏极电流Ids 7.10 A
上升时间 3.1 ns
输入电容Ciss 472pF @15VVds
额定功率Max 1.25 W
下降时间 9.7 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2100 mW
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Discontinued at Digi-Key
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
ZXMN3G32DN8TA Diodes 美台 | 当前型号 | 当前型号 |
DMN3024LSD-13 美台 | 类似代替 | ZXMN3G32DN8TA和DMN3024LSD-13的区别 |
ZXMN3F31DN8TA 美台 | 类似代替 | ZXMN3G32DN8TA和ZXMN3F31DN8TA的区别 |
SI4922BDY-T1-E3 Vishay Siliconix | 功能相似 | ZXMN3G32DN8TA和SI4922BDY-T1-E3的区别 |