Trans GP BJT NPN/PNP 50V/40V 4.5A/3.5A Automotive 8Pin DFN EP T/R
Bipolar BJT Transistor Array NPN, PNP 50V, 40V 4A, 3A 165MHz, 190MHz 1.7W Surface Mount 8-DFN 3x2
得捷:
TRANS NPN/PNP 50V/40V 4A/3A 8DFN
艾睿:
Compared to other transistors, the npn and PNP ZXTC6719MCTA general purpose bipolar junction transistor, developed by Diodes Zetex, can offer a high-voltage solution in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2450 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 50@NPN|40@PNP V and a maximum emitter base voltage of 7 V.
安富利:
Trans GP BJT NPN/PNP 50V/40V 4.5A/3.5A 8-Pin DFN EP T/R
Chip1Stop:
Trans GP BJT NPN/PNP 50V/40V 4.5A/3.5A 8-Pin DFN EP T/R
Verical:
Trans GP BJT NPN/PNP 50V 4.5A/3.5A 2450mW Automotive 8-Pin DFN EP T/R
DeviceMart:
TRANS ARR NPN/PNP 50V/40V DFN
频率 165 MHz
极性 NPN+PNP
耗散功率 2.45 W
击穿电压集电极-发射极 50V, 40V
集电极最大允许电流 4.5A/3.5A
额定功率Max 1.7 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2450 mW
安装方式 Surface Mount
引脚数 8
封装 DFN-8
封装 DFN-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
ZXTC6719MCTA Diodes 美台 | 当前型号 | 当前型号 |
ZXTDC3M832TA 美台 | 功能相似 | ZXTC6719MCTA和ZXTDC3M832TA的区别 |