1个NPN,1个PNP 100V 2.75W 100nA
- 双极 BJT - 阵列 NPN,PNP 100V 2A 175MHz,140MHz 2.75W 表面贴装型 SM-8
得捷:
TRANS NPN/PNP 100V 2A SM8
立创商城:
1个NPN,1个PNP 100V 2A
艾睿:
If you require a general purpose BJT that can handle high voltages, then the npn and PNP ZDT6753TC BJT, developed by Diodes Zetex, is for you. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2750 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans GP BJT NPN/PNP 100V 2A 8-Pin SM8 T/R
Chip1Stop:
Trans GP BJT NPN/PNP 100V 2A 8-Pin SM8 T/R
Verical:
Trans GP BJT NPN/PNP 100V 2A Automotive 8-Pin SM8 T/R
Win Source:
TRANS NPN/PNP 100V 2A SM8
频率 175 MHz
额定电流 2.00 A
极性 NPN+PNP
耗散功率 2.75 W
击穿电压集电极-发射极 100 V
集电极最大允许电流 2A
最小电流放大倍数hFE 100 @500mA, 2V
额定功率Max 2.75 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2750 mW
安装方式 Surface Mount
引脚数 8
封装 SOT-223-8
封装 SOT-223-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准
含铅标准 Lead Free
REACH SVHC标准 No SVHC
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
ZDT6753TC Diodes 美台 | 当前型号 | 当前型号 |
ZDT6753TA 美台 | 完全替代 | ZDT6753TC和ZDT6753TA的区别 |