ZDT694 系列 NPN 120 V 0.5 A 2.25 W 双 功率 晶体管 - SM-8
- 双极 BJT - 阵列 2 NPN（双） 120V 500mA 130MHz 2.75W 表面贴装型 SM8
得捷:
TRANS 2NPN 120V 0.5A SM8
立创商城:
2个NPN 120V 500mA
艾睿:
This specially engineered NPN ZDT694TA GP BJT from Diodes Zetex comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2750 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 5 V.
安富利:
Trans GP BJT NPN 120V 0.5A 8-Pin SM8 T/R
富昌:
ZDT694 系列 NPN 120 V 0.5 A 2.25 W 双 功率 晶体管 - SM-8
Chip1Stop:
Trans GP BJT NPN 120V 0.5A 8-Pin SM8 T/R
Verical:
Trans GP BJT NPN 120V 0.5A Automotive 8-Pin SM8 T/R
AMEYA360:
TRANS 2NPN 120V 0.5A SM8
Win Source:
TRANS 2NPN 120V 0.5A SM8
DeviceMart:
TRANS NPN DUAL 120V .5A SOT223-8
额定电压DC 120 V
额定电流 500 mA
额定功率 2.75 W
极性 NPN
耗散功率 2.75 W
增益频宽积 130 MHz
击穿电压集电极-发射极 120 V
集电极最大允许电流 0.5A
最小电流放大倍数hFE 400 @200mA, 2V
最大电流放大倍数hFE 500
额定功率Max 2.75 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2750 mW
安装方式 Surface Mount
引脚数 8
封装 SOT-223-8
长度 6.7 mm
宽度 3.7 mm
高度 1.6 mm
封装 SOT-223-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC