






SEMELAB D2219UK 晶体管, 射频FET, 40 V, 2 A, 17.5 W, 1 MHz, 2 GHz, SOIC
The is a metal gate RF Silicon FET with single ended configuration for HF/VHF/UHF communications from 1MHz to 1GHz applications. It is a gold metalized multi-purpose DMOS RF transistor features simplified amplifier design and suitable for broadband applications.
针脚数 8
耗散功率 17.5 W
漏源极电压Vds 40 V
输出功率 2.5 W
输入电容Ciss 12pF @0VVds
工作温度Max 200 ℃
工作温度Min -65 ℃
耗散功率Max 17.5 W
安装方式 Surface Mount
引脚数 8
封装 SOIC
长度 4.06 mm
宽度 5.08 mm
高度 2.18 mm
封装 SOIC
材质 Silicon
产品生命周期 Active
制造应用 Industrial, 通信与网络, 电源管理, 工业, Communications & Networking, Power Management
RoHS标准 RoHS Compliant
含铅标准 Contains Lead
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99