Trans MOSFET N-CH 60V 12A 8Pin SOIC Tube
**N-Channel Power MOSFET 8A to 12A, Infineon**
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
得捷:
MOSFET N-CH 60V 12A 8SO
艾睿:
Trans MOSFET N-CH 60V 12A 8-Pin SOIC Tube
Verical:
Trans MOSFET N-CH 60V 12A 8-Pin SOIC Tube
漏源极电阻 9.4 mΩ
极性 N-Channel
耗散功率 2.5 W
产品系列 IRF7855
输入电容 1560pF @25V
漏源极电压Vds 60 V
连续漏极电流Ids 12.0 A
输入电容Ciss 1560pF @25VVds
额定功率Max 2.5 W
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC