IRF6646TR1

Trans MOSFET N-CH Si 80V 12A 7Pin Direct-FET MN T/R

Description

The IRF6646 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

 RoHS compliant containing no lead or bromide c

 Low Profile <0.7 mm

 Dual Sided Cooling Compatible c

 Ultra Low Package Inductance

 Optimized for High Frequency Switching c

 Ideal for High Performance Isolated Converter Primary Switch Socket

 Optimized for Synchronous Rectification

 Low Conduction Losses

 Compatible with existing Surface Mount Techniques c