MMBF170LT1G

ON SEMICONDUCTOR  MMBF170LT1G  晶体管, MOSFET, N沟道, 500 mA, 60 V, 5 ohm, 10 V, 3 V

N 通道功率 MOSFET，60V，

### MOSFET ，ON Semiconductor

欧时:
ON Semiconductor Si N沟道 MOSFET MMBF170LT1G, 500 mA, Vds=60 V, 3引脚 SOT-23封装

得捷:
MOSFET N-CH 60V 500MA SOT23-3

立创商城:
MMBF170LT1G

艾睿:
Create an effective common drain amplifier using this MMBF170LT1G power MOSFET from ON Semiconductor. Its maximum power dissipation is 225 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.

Allied Electronics:
MOSFET; Power; N-Ch; VDSS 60VDC; RDSON 5 Ohms; ID 0.5A; SOT-23 TO-236; PD 225mW

富昌:
N 沟道 60 V 5 Ohm 225 mW 表面贴装 功率 MOSFET - SOT-23

TME:
Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.225W; SOT23

Verical:
Trans MOSFET N-CH 60V 0.5A 3-Pin SOT-23 T/R

Newark:
# ON SEMICONDUCTOR  MMBF170LT1G  MOSFET Transistor, N Channel, 500 mA, 60 V, 5 ohm, 10 V, 3 V

力源芯城:
0.5A,60V,SOT-223-3,N沟道功率MOSFET

Win Source:
MOSFET N-CH 60V 500MA SOT-23