MUN5312DW1T1G

ON SEMICONDUCTOR  MUN5312DW1T1G  晶体管 双极预偏置/数字, AEC-Q101, 50 V, 100 mA, 22 kohm, 22 kohm, 1 电阻比率, SOT-363 新

双电阻器双数字，

欧时:
ON Semiconductor MUN5312DW1T1G 双 NPN + PNP 数字晶体管, 100 mA, Vce=50 V, 22 kΩ, 电阻比:1, 6引脚

得捷:
TRANS PREBIAS NPN/PNP SOT363

立创商城:
互补双极数字晶体管 BRT

e络盟:
晶体管 双极预偏置/数字, AEC-Q101, NPN和PNP执行, 50 V, 100 mA, 22 kohm, 22 kohm, 1 电阻比率

艾睿:
Are you designing a digital processing circuit and are looking to apply the characteristics of traditional BJT&s;s within? Look no further than the npn and PNP MUN5312DW1T1G digital transistor from ON Semiconductor. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 60@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 385 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a dual configuration.

Allied Electronics:
MUN5312DW1T1G NPN+PNP Digi Transistor; 100mA 50V 22 kOhm; Ratio Of 1; 6-Pin SC-88

安富利:
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R

Chip1Stop:
Trans Digital BJT NPN/PNP 50V 100mA 385mW Automotive 6-Pin SC-88 T/R

Verical:
Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SC-88 T/R

Newark:
# ON SEMICONDUCTOR  MUN5312DW1T1G  Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 22 kohm, 22 kohm, 1 Ratio, SC-88

Win Source:
TRANS PREBIAS NPN/PNP SOT363