双偏置电阻晶体管 Dual Bias Resistor Transistors
Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single
device. In the MUN5111DW1T1 series,two BRT devices are housed in the SOT−363 package which is ideal for low−power surface mount applications where board space is at a premium.
Features
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•Pb−Free Packages are Available
额定电压DC -50.0 V
额定电流 -100 mA
无卤素状态 Halogen Free
极性 PNP
耗散功率 250 mW
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 80 @5mA, 10V
最大电流放大倍数hFE 80 @5mA, 10V
额定功率Max 250 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 385 mW
安装方式 Surface Mount
引脚数 6
封装 SC-88-6
长度 2 mm
宽度 1.25 mm
高度 0.9 mm
封装 SC-88-6
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MUN5137DW1T1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MUN2140T1G 安森美 | 功能相似 | MUN5137DW1T1G和MUN2140T1G的区别 |
PUMB17,115 恩智浦 | 功能相似 | MUN5137DW1T1G和PUMB17,115的区别 |
MUN2137T1G 安森美 | 功能相似 | MUN5137DW1T1G和MUN2137T1G的区别 |