MUN5232DW1T1G

ON SEMICONDUCTOR  MUN5232DW1T1G  晶体管 双极预偏置/数字, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率, SOT-363 新

- 双极 BJT - 阵列 - 预偏置 2 个 NPN 预偏压式（双） 50V 100mA - 250mW 表面贴装型 SC-88/SC70-6/SOT-363

得捷:
TRANS 2NPN PREBIAS 0.25W SOT363

立创商城:
双 NPN 双极数字晶体管 BRT

欧时:
ON Semiconductor, MUN5232DW1T1G

贸泽:
双极晶体管 - 预偏置 SS BR XSTR NPN 50V

e络盟:
晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率

艾睿:
If you are building a digital signal processing device, make sure to use ON Semiconductor&s;s NPN MUN5232DW1T1G digital transistor&s;s within your circuit! This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 15@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 385 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a dual configuration. This transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans Digital BJT NPN 50V 100mA 6-Pin SOT-363 T/R

Chip1Stop:
Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SC-88 T/R

TME:
Transistor: NPN; bipolar; 50V; 100mA; 187mW; SOT363

Verical:
Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SC-88 T/R

Newark:
# ON SEMICONDUCTOR  MUN5232DW1T1G  Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 Ratio, SOT-363

Win Source:
TRANS 2NPN PREBIAS 0.25W SOT363