放大器晶体管 Amplifier Transistors
Look no further than "s NPN general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor"s maximum emitter base voltage is 4 V. Its maximum power dissipation is 625 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 4 V.
频率 100 MHz
额定电压DC 80.0 V
额定电流 500 mA
极性 NPN
耗散功率 0.625 W
击穿电压集电极-发射极 80 V
集电极最大允许电流 0.5A
最小电流放大倍数hFE 100 @100mA, 1V
额定功率Max 625 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 625 mW
安装方式 Through Hole
引脚数 3
封装 TO-226-3
封装 TO-226-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MPSA06RLG ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MPSA06RLRPG 安森美 | 完全替代 | MPSA06RLG和MPSA06RLRPG的区别 |
MPSA06RLRAG 安森美 | 类似代替 | MPSA06RLG和MPSA06RLRAG的区别 |
MPSA06G 安森美 | 类似代替 | MPSA06RLG和MPSA06G的区别 |