ON SEMICONDUCTOR MPSA92ZL1G 双极性晶体管, PNP, 300V VBRCEO, 500mA IC, TO-92
The versatility of this PNP GP BJT from makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
频率 50 MHz
额定电压DC -300 V
额定电流 -500 mA
针脚数 3
极性 PNP
耗散功率 625 mW
击穿电压集电极-发射极 300 V
集电极最大允许电流 0.5A
最小电流放大倍数hFE 25 @30mA, 10V
额定功率Max 625 mW
直流电流增益hFE 25
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 625 mW
安装方式 Through Hole
引脚数 3
封装 TO-226-3
高度 5.33 mm
封装 TO-226-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MPSA92ZL1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MPSA92RL1G 安森美 | 完全替代 | MPSA92ZL1G和MPSA92RL1G的区别 |
MPSA92RL1 安森美 | 完全替代 | MPSA92ZL1G和MPSA92RL1的区别 |
MPSA92RLRP 安森美 | 完全替代 | MPSA92ZL1G和MPSA92RLRP的区别 |