MRFE6VP100HR5

NXP  MRFE6VP100HR5  射频晶体管, LDMOS, 100W, NI-780

Overview

and MRFE6VP100HSR5 are RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using Our enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered.

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## Features

* Wide Operating Frequency Range

* Extremely Rugged

* Unmatched, Capable of Very Broadband Operation

* Integrated Stability Enhancements

* Low Thermal Resistance

* Integrated ESD Protection Circuitry

* RoHS Compliant

* In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.

* These products are included in Our product longevity program with assured supply for a minimum of 15 years after launch.

## Features RF Performance Tables

### 30-512 MHz Broadband

VDD = 50 Volts

.

*Frequency

MHz

.

* | **Signal Type** | **Pout

W

.

* | **Gps

dB

.

* | **ηD

%

.

* | **IMD

dBc

.

*

\---|---|---|---|---|---

30 to 512| Two-Tone

100 kHz spacing| 100 PEP| 19.0| 30.0| –30

### 512 MHz Narrowband

VDD = 50 Volts

.

*Frequency

MHz

.

* | **Signal Type** | **Pout

W

.

* | **Gps

dB

.

* | **ηD

%

.

*

\---|---|---|---|---

512| CW| 100| 27.2| 70.0

512| Pulse 200 µsec,

20% Duty Cycle| 100 Peak| 26.0| 70.0

### Ruggedness, 512 MHz

**Frequency

MHz

.

* | **Signal Type** | **VSWR** | **Pout

W

.

* | **Test

Voltage

.

* | **Result**

\---|---|---|---|---|---

512| Pulse

100 µsec,

20% Duty Cycle| >65:1

at all Phase

Angles| 130

3 dB

Overdrive| 50| No

Device

Degradation

512| CW| 126

3 dB

Overdrive