Trans IGBT Module N-CH 1200V 35A 105000mW 24Pin E2-Pack
This secure and fast infineon IGBT module from Ixys Corporation is perfect for your circuit. Its maximum power dissipation is 105000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT driver board has an operating temperature range of -40 °C to 125 °C. It is made in a hex configuration.
得捷:
IGBT MODULE 1200V 35A 180W E2
艾睿:
This secure and fast MUBW15-12A7 infineon IGBT module from Ixys Corporation is perfect for your circuit. Its maximum power dissipation is 105000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT driver board has an operating temperature range of -40 °C to 125 °C. It is made in a hex configuration.
Verical:
Trans IGBT Module N-CH 1200V 35A 180000mW 24-Pin E2-Pack
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MUBW15-12A7 IXYS Semiconductor | 当前型号 | 当前型号 |
MUBW10-12A7 IXYS Semiconductor | 类似代替 | MUBW15-12A7和MUBW10-12A7的区别 |