MUBW15-12A7

MUBW15-12A7图片1
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MUBW15-12A7概述

Trans IGBT Module N-CH 1200V 35A 105000mW 24Pin E2-Pack

This secure and fast infineon IGBT module from Ixys Corporation is perfect for your circuit. Its maximum power dissipation is 105000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT driver board has an operating temperature range of -40 °C to 125 °C. It is made in a hex configuration.


得捷:
IGBT MODULE 1200V 35A 180W E2


艾睿:
This secure and fast MUBW15-12A7 infineon IGBT module from Ixys Corporation is perfect for your circuit. Its maximum power dissipation is 105000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT driver board has an operating temperature range of -40 °C to 125 °C. It is made in a hex configuration.


Verical:
Trans IGBT Module N-CH 1200V 35A 180000mW 24-Pin E2-Pack


MUBW15-12A7中文资料参数规格
技术参数

耗散功率 105000 mW

击穿电压集电极-发射极 1200 V

输入电容Cies 1nF @25V

额定功率Max 180 W

工作温度Max 125 ℃

工作温度Min -40 ℃

耗散功率Max 105000 mW

封装参数

安装方式 Chassis

引脚数 24

封装 E2-Pack

外形尺寸

封装 E2-Pack

物理参数

工作温度 -40℃ ~ 125℃ TJ

其他

产品生命周期 Active

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买MUBW15-12A7
型号: MUBW15-12A7
制造商: IXYS Semiconductor
描述:Trans IGBT Module N-CH 1200V 35A 105000mW 24Pin E2-Pack
替代型号MUBW15-12A7
型号/品牌 代替类型 替代型号对比

MUBW15-12A7

IXYS Semiconductor

当前型号

当前型号

MUBW10-12A7

IXYS Semiconductor

类似代替

MUBW15-12A7和MUBW10-12A7的区别

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