Trans GP BJT NPN 160V 0.2A 200mW Automotive 3Pin SOT-323 T/R
- 双极 BJT - 单 NPN 300MHz 表面贴装型 SOT-323
得捷:
TRANS NPN 160V 0.2A SOT323
立创商城:
NPN 160V 200mA
艾睿:
Add switching and amplifying capabilities to your electronic circuit with this NPN MMST5551-7-F GP BJT from Diodes Zetex. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V.
Allied Electronics:
Transistor NPN 160V 0.2A SOT323
安富利:
Trans GP BJT NPN 160V 0.2A 3-Pin SOT-323 T/R
Chip1Stop:
Trans GP BJT NPN 160V 0.2A 3-Pin SOT-323 T/R
Verical:
Trans GP BJT NPN 160V 0.2A 200mW Automotive 3-Pin SOT-323 T/R
儒卓力:
**NPN TRANS 160V 0,2A SOT323 **
Win Source:
TRANS NPN 160V 0.2A SC70-3
DeviceMart:
TRANSISTOR NPN 160V SC70-3
频率 300 MHz
额定电压DC 160 V
额定电流 200 mA
极性 NPN
耗散功率 200 mW
击穿电压集电极-发射极 160 V
最小电流放大倍数hFE 80 @10mA, 5V
额定功率Max 200 mW
直流电流增益hFE 80
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 200 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-323
封装 SOT-323
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MMST5551-7-F Diodes 美台 | 当前型号 | 当前型号 |
MMST5551-TP 美微科 | 类似代替 | MMST5551-7-F和MMST5551-TP的区别 |
MMST5551-7 美台 | 类似代替 | MMST5551-7-F和MMST5551-7的区别 |
PMST5550,115 恩智浦 | 功能相似 | MMST5551-7-F和PMST5550,115的区别 |