STMICROELECTRONICS PD55003-E 晶体管, 射频FET, 40 V, 2.5 A, 31.7 W, 1 GHz, PowerSO-10RF
The is a N-channel RF Power Transistor designed for high gain, broad band applications. It operates at 12V in common source mode at frequencies of up to 1GHz. It boasts excellent gain, linearity and reliability thanks to ST"s latest LDMOS technology mounted in the first true SMD plastic RF power package, the PowerSO-10RF. The superior linearity performance makes it an ideal solution for car mobile radios. It has been optimized for RF requirements and offers excellent RF performance and ease of assembly.
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- Excellent thermal stability
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- Common source configuration
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- Enhancement-mode lateral field-effect transistor
频率 500 MHz
额定电压DC 40.0 V
额定电流 2.5 A
针脚数 3
极性 N-Channel
耗散功率 31.7 W
漏源极电压Vds 40 V
漏源击穿电压 40 V
连续漏极电流Ids 2.50 A
输出功率 3 W
增益 17 dB
测试电流 50 mA
输入电容Ciss 36pF @12.5VVds
工作温度Max 165 ℃
工作温度Min -65 ℃
耗散功率Max 31700 mW
额定电压 40 V
安装方式 Surface Mount
引脚数 3
封装 PowerSO-10RF
长度 7.5 mm
宽度 9.4 mm
高度 3.5 mm
封装 PowerSO-10RF
工作温度 -65℃ ~ 165℃
产品生命周期 Active
包装方式 Tube
制造应用 Industrial, 电源管理, 工业, Commercial, Power Management, 商业
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
香港进出口证 NLR
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PD55003-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
PD55003S-E 意法半导体 | 完全替代 | PD55003-E和PD55003S-E的区别 |
PD55003TR-E 意法半导体 | 类似代替 | PD55003-E和PD55003TR-E的区别 |
PD55003L-E 意法半导体 | 功能相似 | PD55003-E和PD55003L-E的区别 |