射频金属氧化物半导体场效应RF MOSFET晶体管 POWER R.F.
Using semiconductor technology, this RF amplifier from STMicroelectronics operates at high frequencies to amplify or switch electronic signals and electrical power. Its maximum power dissipation is 31700 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C.
频率 500 MHz
额定电压DC 40.0 V
额定电流 2.5 A
耗散功率 31.7 W
漏源极电压Vds 40 V
连续漏极电流Ids 2.50 A
输出功率 3 W
增益 17 dB
测试电流 50 mA
输入电容Ciss 36pF @12.5VVds
工作温度Max 165 ℃
工作温度Min -65 ℃
耗散功率Max 31700 mW
额定电压 40 V
安装方式 Surface Mount
引脚数 3
封装 PowerSO-10RF
长度 7.5 mm
宽度 9.4 mm
高度 3.5 mm
封装 PowerSO-10RF
工作温度 -65℃ ~ 165℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PD55003S-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
PD55003-E 意法半导体 | 完全替代 | PD55003S-E和PD55003-E的区别 |
PD55003TR-E 意法半导体 | 类似代替 | PD55003S-E和PD55003TR-E的区别 |
PD55003S 意法半导体 | 类似代替 | PD55003S-E和PD55003S的区别 |