PXFC192207SHV1R250XTMA1

High Power RF LDMOS FET, 220W, 28V, 1805 – 1990MHz

Summary of Features:

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Broadband internal input and output matching

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Typical Pulsed CW performance, 1880 MHz, 28 V, 10 μs pulse width, 10% duty cycle, class AB

\- Output power at P1dB = 220 W

\- Efficiency = 55%

\- Gain = 20 dB

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Typical single-carrier WCDMA performance, 1880 MHz, 28 V, 10 dB PAR @ 0.01% CCDF

\- Output power = 50 W

\- Efficiency = 29%

\- Gain = 20 dB

\- ACPR = –34 dBc @5 MHz

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Capable of handling 10:1 VSWR @28 V, 200 W CW output power

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Integrated ESD protection

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Low thermal resistance

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Pb-free and RoHS-compliant