NXP PBSS4032NT 单晶体管 双极, NPN, 30 V, 180 MHz, 390 mW, 2.6 A, 500 hFE
The is a 2.6A NPN breakthrough-in small signal BISS Transistor in a small surface-mount plastic package.
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- Low collector-emitter saturation voltage VCEsat
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- Optimized switching time
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- High collector current capability IC and ICM
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- High collector current gain hFE at high IC
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- High energy efficiency due to less heat generation
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- Smaller required printed-circuit board PCB area than for conventional transistors
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- AEC-Q101 qualified
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- PNP complement is PBSS4032PT
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- BM Marking code
频率 180 MHz
针脚数 3
极性 NPN
耗散功率 390 mW
击穿电压集电极-发射极 30 V
集电极最大允许电流 2.6A
最小电流放大倍数hFE 100
直流电流增益hFE 500
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1100 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23
长度 3 mm
宽度 1.4 mm
高度 1.1 mm
封装 SOT-23
产品生命周期 Unknown
包装方式 Cut Tape CT
制造应用 Automotive, Power Management, Industrial, Consumer Electronics, Signal Processing
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PBSS4032NT NXP 恩智浦 | 当前型号 | 当前型号 |
PBSS4032NT,215 恩智浦 | 功能相似 | PBSS4032NT和PBSS4032NT,215的区别 |
PBSS4041NT 安世 | 功能相似 | PBSS4032NT和PBSS4041NT的区别 |
PBSS4041PT 安世 | 功能相似 | PBSS4032NT和PBSS4041PT的区别 |