RN1427TE85LF

RN1427TE85LF图片1
RN1427TE85LF图片2
RN1427TE85LF图片3
RN1427TE85LF概述

Trans Digital BJT NPN 50V 800mA 200mW 3Pin S-Mini T/R

Thanks to , easily integrate NPN digital transistors into digital signal processing circuits. This product"s maximum continuous DC collector current is 800 mA, while its minimum DC current gain is 90@100mA@1 V. It has a maximum collector emitter saturation voltage of 0.25@2mA@50mA|0.25@1mA@50mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 200 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

RN1427TE85LF中文资料参数规格
技术参数

耗散功率 200 mW

击穿电压集电极-发射极 50 V

最小电流放大倍数hFE 90 @100mA, 1V

额定功率Max 200 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

增益带宽 300 MHz

耗散功率Max 200 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-23-3

外形尺寸

封装 SOT-23-3

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买RN1427TE85LF
型号: RN1427TE85LF
制造商: Toshiba 东芝
描述:Trans Digital BJT NPN 50V 800mA 200mW 3Pin S-Mini T/R

 锐单商城 - 一站式电子元器件采购平台  

 深圳锐单电子有限公司