STMICROELECTRONICS STS6NF20V 晶体管, MOSFET, N沟道, 6 A, 20 V, 45 mohm, 2.7 V, 600 mV
N 通道 STripFET™,STMicroelectronics
### MOSFET ,STMicroelectronics
欧时:
STMicroelectronics STripFET 系列 Si N沟道 MOSFET STS6NF20V, 6 A, Vds=20 V, 8引脚 SOIC封装
得捷:
MOSFET N-CH 20V 6A 8SO
立创商城:
N沟道 20V 6A
e络盟:
功率场效应管, MOSFET, N沟道, 20 V, 6 A, 0.045 ohm, SOIC, 表面安装
艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The STS6NF20V power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes stripfet ii technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 20V 6A 8-Pin SO N T/R
Verical:
Trans MOSFET N-CH 20V 6A 8-Pin SO N T/R
Newark:
# STMICROELECTRONICS STS6NF20V MOSFET Transistor, N Channel, 6 A, 20 V, 45 mohm, 2.7 V, 600 mV
Win Source:
MOSFET N-CH 20V 6A 8SOIC
DeviceMart:
MOSFET N-CH 20V 6A 8SOIC
针脚数 8
漏源极电阻 0.045 Ω
极性 N-Channel
耗散功率 2.5 W
阈值电压 600 mV
漏源极电压Vds 20 V
漏源击穿电压 20.0 V
栅源击穿电压 ±12.0 V
连续漏极电流Ids 6.00 A
上升时间 33 ns
输入电容Ciss 460pF @15VVds
额定功率Max 2.5 W
下降时间 10 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2500 mW
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.25 mm
封装 SOIC-8
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 工业, Industrial, Communications & Networking, 电源管理, Computers & Computer Peripherals, Power Management, 通信与网络, 计算机和计算机周边
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STS6NF20V ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
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IRF7402PBF 国际整流器 | 功能相似 | STS6NF20V和IRF7402PBF的区别 |