STMICROELECTRONICS STGWA15M120DF3 单晶体管, IGBT, 30 A, 1.85 V, 259 W, 1.2 kV, TO-247, 3 引脚
IGBT 沟槽型场截止 1200 V 30 A 259 W 通孔 TO-247 长引线
立创商城:
STGWA15M120DF3
得捷:
IGBT 1200V 30A 259W
贸泽:
IGBT 晶体管 Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
e络盟:
单晶体管, IGBT, 30 A, 1.85 V, 259 W, 1.2 kV, TO-247, 3 引脚
艾睿:
Minimize the current at your gate with the STGWA15M120DF3 IGBT transistor from STMicroelectronics. Its maximum power dissipation is 259000 mW. It has a maximum collector emitter voltage of 1200 V. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with field stop|trench technology. It is made in a single configuration.
安富利:
Trans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube
Chip1Stop:
Trans IGBT Chip N-CH 1.2KV 30A 3-Pin3+Tab TO-247 Tube
Verical:
Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin3+Tab TO-247 Tube
Newark:
# STMICROELECTRONICS STGWA15M120DF3 IGBT Single Transistor, 30 A, 1.85 V, 259 W, 1.2 kV, TO-247, 3 Pins