










BCP53 系列 80 V 1.5 A PNP 表面贴装 硅 外延 晶体管 - SOT-223
Bipolar BJT Transistor PNP 80V 1.5A 50MHz 1.5W Surface Mount SOT-223-3
欧时:
SS SOT223 GP XSTR PNP 80V
得捷:
TRANS PNP 80V 1.5A SOT-223
立创商城:
SBCP53-16T1G
贸泽:
双极晶体管 - 双极结型晶体管BJT SS GP XSTR PNP 80V
e络盟:
单晶体管 双极, PNP, -80 V, 50 MHz, 1.5 W, 1.5 A, 40 hFE
艾睿:
ON Semiconductor has the solution to your circuit&s;s high-voltage requirements with their PNP SBCP53-16T1G general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
安富利:
Trans GP BJT PNP 80V 1.5A 4-Pin3+Tab SOT-223 T/R
Verical:
Trans GP BJT PNP 80V 1.5A 1500mW Automotive 4-Pin3+Tab SOT-223 T/R
Newark:
# ON SEMICONDUCTOR SBCP53-16T1G TRANS, AEC-Q101, PNP, -80V, SOT-223-3 New
Win Source:
TRANS PNP 80V 1.5A SOT-223
频率 50 MHz
针脚数 3
极性 PNP
耗散功率 1.5 W
击穿电压集电极-发射极 80 V
集电极最大允许电流 1.5A
最小电流放大倍数hFE 100 @150mA, 2V
最大电流放大倍数hFE 250
额定功率Max 1.5 W
直流电流增益hFE 40
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 1500 mW
安装方式 Surface Mount
引脚数 4
封装 TO-261-4
封装 TO-261-4
材质 Silicon
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
SBCP53-16T1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
BCP53-16T3G 安森美 | 类似代替 | SBCP53-16T1G和BCP53-16T3G的区别 |
BCP53-16T1G 安森美 | 功能相似 | SBCP53-16T1G和BCP53-16T1G的区别 |