FAIRCHILD SEMICONDUCTOR SI4542DY 双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 0.019 ohm, 10 V, 1.5 V
The is a 30V Complementary PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. "s the latest medium voltage power MOSFET is optimized power switches combining small gate charge QG, small reverse recovery charge Qrr and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM figure of merit QGxRDSON of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
额定电压DC 30.0 V
额定电流 7.00 A
针脚数 8
漏源极电阻 0.019 Ω
极性 N-Channel, P-Channel
耗散功率 2 W
阈值电压 1.5 V
漏源极电压Vds 30 V
漏源击穿电压 ±30.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 6.00 A
输入电容Ciss 830pF @15VVds
额定功率Max 1 W
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 1.6 W
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 4.9 mm
宽度 3.9 mm
高度 1.575 mm
封装 SOIC-8
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
SI4542DY Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STS7C4F30L 意法半导体 | 功能相似 | SI4542DY和STS7C4F30L的区别 |
SI4542DY-E3 Vishay Siliconix | 功能相似 | SI4542DY和SI4542DY-E3的区别 |