




STMICROELECTRONICS STD5NK50Z-1 晶体管, MOSFET, N沟道, 2.2 A, 500 V, 1.22 ohm, 10 V, 3.75 V
N-Channel 500V 4.4A Tc 70W Tc Through Hole I-PAK
得捷:
MOSFET N-CH 500V 4.4A IPAK
欧时:
### N 通道 MDmesh™ SuperMESH™,250V 至 650V,STMicroelectronics### MOSFET 晶体管,STMicroelectronics
贸泽:
MOSFET N-Ch, 500V-1.22ohms Zener SuperMESH 4.4A
e络盟:
STMICROELECTRONICS STD5NK50Z-1 晶体管, MOSFET, N沟道, 2.2 A, 500 V, 1.22 ohm, 10 V, 3.75 V
艾睿:
Thanks to STMicroelectronics, both your amplification and switching needs can be taken care of with one component: the STD5NK50Z-1 power MOSFET. Its maximum power dissipation is 70000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with supermesh technology. This N channel MOSFET transistor operates in enhancement mode.
Win Source:
N-CHANNEL500V-1.22ohm-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESHPower MOSFET
通道数 1
针脚数 3
漏源极电阻 1.22 Ω
极性 N-Channel
耗散功率 70 W
阈值电压 3.75 V
漏源极电压Vds 500 V
漏源击穿电压 500 V
连续漏极电流Ids 2.20 A
上升时间 10 ns
输入电容Ciss 535pF @25VVds
下降时间 15 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 70000 mW
安装方式 Through Hole
引脚数 3
封装 TO-251-3
长度 6.6 mm
宽度 2.4 mm
高度 6.2 mm
封装 TO-251-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STD5NK50Z-1 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STU5N52K3 意法半导体 | 类似代替 | STD5NK50Z-1和STU5N52K3的区别 |
STD5N62K3 意法半导体 | 功能相似 | STD5NK50Z-1和STD5N62K3的区别 |
STB5N62K3 意法半导体 | 功能相似 | STD5NK50Z-1和STB5N62K3的区别 |