SI4936DY

双N沟道增强型MOSFET Dual N-Channel Enhancement Mode MOSFET

General Description

These N-Channel Enhancement Mode MOSFETs are produced using Semiconductor"s advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

 5.8 A, 30 V. RDSON = 0.037 Ω @ VGS = 10 V

                 RDSON  = 0.055 Ω @ VGS = 4.5 V

 Low gate charge.

 Fast switching speed.

 High power and current handling capability.

Applications

Battery switch

Load switch

Motor controls