N沟道600V - 0.37Ω - 10A - FDmesh ™II功率MOSFET I2PAK ， TO- 220 ， TO- 220FP ， IPAK ， DPAK N-channel 600V - 0.37Ω - 10A - FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
Description
The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company"s strip layout and associates all advantages of reduced on resistance and fast switching with an intrinsic fast recovery body diode.It is therefore strongly recommended for bridge topologies, in particular
■ The worldwide best RDSon
- .
- area amongst the fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche capabilities
通道数 1
漏源极电阻 450 mΩ
极性 N-CH
耗散功率 90 W
漏源极电压Vds 600 V
漏源击穿电压 600 V
连续漏极电流Ids 10A
上升时间 7 ns
输入电容Ciss 850pF @50VVds
下降时间 9 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 90W Tc
安装方式 Through Hole
引脚数 3
封装 TO-251-3
长度 10 mm
宽度 4.4 mm
高度 8.95 mm
封装 TO-251-3
工作温度 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STU11NM60ND ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STB11NM60T4 意法半导体 | 功能相似 | STU11NM60ND和STB11NM60T4的区别 |
STD11NM60ND 意法半导体 | 功能相似 | STU11NM60ND和STD11NM60ND的区别 |
STP11NM60FD 意法半导体 | 功能相似 | STU11NM60ND和STP11NM60FD的区别 |