






VISHAY SI7461DP-T1-GE3 场效应管, MOSFET, P通道, -60V, 14.4A, SOIC, 整卷
The is a -60V P-channel TrenchFET® Power MOSFET. Low thermal resistance PowerPAK® package with small size and low 1.07mm profile. Used in active clamp in intermediate DC/DC power supplies.
e络盟:
The SI7461DP-T1-GE3 is a -60V P-channel TrenchFET® Power MOSFET. Low thermal resistance PowerPAK® package with small size and low 1.07mm profile. Used in active clamp in intermediate DC/DC power supplies. The P-channel MOSFET for switching applications are now available with die on resistances around 1mR and with the capability to handle 85A.
艾睿:
Trans MOSFET P-CH 60V 8.6A 8-Pin PowerPAK SO T/R
富昌:
单 N 沟道 60 V 0.00625 Ohm 表面贴装 功率 MosFet - POWERPAK-SO-8
Verical:
Trans MOSFET P-CH 60V 8.6A 8-Pin PowerPAK SO T/R
Newark:
# VISHAY SI7461DP-T1-GE3 MOSFET Transistor, P Channel, -8.6 A, -60 V, 0.0115 ohm, -4.5 V, -3 V
针脚数 8
漏源极电阻 0.0115 Ω
极性 P-Channel
耗散功率 1.9 W
漏源极电压Vds 60 V
连续漏极电流Ids -14.4 A
上升时间 20 ns
下降时间 90 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 5400 mW
安装方式 Surface Mount
引脚数 8
封装 SOIC
高度 1.04 mm
封装 SOIC
工作温度 -55℃ ~ 150℃
包装方式 Tape & Reel TR
制造应用 电源管理, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
SI7461DP-T1-GE3 Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
SI7461DP-T1-E3 威世 | 功能相似 | SI7461DP-T1-GE3和SI7461DP-T1-E3的区别 |