S34ML01G200TFI503

S34ML01G200TFI503图片1
S34ML01G200TFI503图片2
S34ML01G200TFI503概述

1Bit Ecc, X8 i/o And 3V Vcc s

闪存 - NAND 存储器 IC 1Gb(128M x 8) 并联 48-TSOP I


得捷:
IC FLASH 1GBIT PARALLEL 48TSOP


艾睿:
IC FLASH 1GBIT


安富利:
The Spansion S34ML01G2 is offered in 3.3 VCC and VCCQ power supply, and with x8 or x16 I/O interface. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The page size for x8 is 2048 + spare bytes; for x16 1024 + spare words.To extend the lifetime of NAND flash devices, the implementation of an ECC is mandatory.The chip supports CE# don"t care function. This function allows the direct download of the code from the NAND flash memory device by a microcontroller, since the CE# transitions do not stop the read operation.The devices have a Read Cache feature that improves the read throughput for large files. During cache reading, the devices load the data in a cache register while the previous data is transferred to the I/O buffers to be read.Like all other 2-kB page NAND flas


S34ML01G200TFI503中文资料参数规格
封装参数

封装 TFSOP-48

外形尺寸

封装 TFSOP-48

其他

产品生命周期 Unknown

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买S34ML01G200TFI503
型号: S34ML01G200TFI503
制造商: Cypress Semiconductor 赛普拉斯
描述:1Bit Ecc, X8 i/o And 3V Vcc s

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