SIS407DN-T1-GE3

VISHAY  SIS407DN-T1-GE3  晶体管, MOSFET, P沟道, -25 A, -20 V, 0.0082 ohm, -4.5 V, -400 mV

The is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and battery switch applications.

.

Low thermal resistance PowerPAK® package with small size and low 1.07mm profile

.

100% Rg tested

.

100% UIS tested

.

Halogen-free

.

-55 to 150°C Operating temperature range