STMICROELECTRONICS STB21NM60ND 功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
N 通道 FDmesh™ 功率 MOSFET,STMicroelectronics
### MOSFET ,STMicroelectronics
得捷:
MOSFET N-CH 600V 17A D2PAK
欧时:
STMicroelectronics FDmesh 系列 Si N沟道 MOSFET STB21NM60ND, 17 A, Vds=600 V, 3引脚 TO-263封装
贸泽:
MOSFET N-channel 600V, 17A FDMesh II
艾睿:
Increase the current or voltage in your circuit with this STB21NM60ND power MOSFET from STMicroelectronics. Its maximum power dissipation is 140000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with fdmesh ii technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 600V 17A 3-Pin2+Tab D2PAK T/R
富昌:
N-Channel 600 V 0.220 Ohm Surface Mount FDmesh™ II Power MosFet - D2PAK
Chip1Stop:
Trans MOSFET N-CH 600V 17A 3-Pin2+Tab D2PAK T/R
TME:
Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 10A; 140W; D2PAK
Verical:
Trans MOSFET N-CH 600V 17A 3-Pin2+Tab D2PAK T/R
Newark:
# STMICROELECTRONICS STB21NM60ND Power MOSFET, N Channel, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
儒卓力:
**N-CH 650V 17A 220mOhm TO263-3 **
力源芯城:
600V,17A,N沟道MOSFET
DeviceMart:
MOSFET N-CH 600V 17A D2PAK
Win Source:
MOSFET N-CH 600V 17A D2PAK
针脚数 3
漏源极电阻 0.17 Ω
极性 N-Channel
耗散功率 140 W
阈值电压 4 V
漏源极电压Vds 600 V
上升时间 16 ns
输入电容Ciss 1800pF @50VVds
额定功率Max 140 W
下降时间 48 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 140W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.75 mm
宽度 10.4 mm
高度 4.6 mm
封装 TO-263-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STB21NM60ND ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STB24NM60N 意法半导体 | 类似代替 | STB21NM60ND和STB24NM60N的区别 |
STB21NM60N 意法半导体 | 类似代替 | STB21NM60ND和STB21NM60N的区别 |
STW24NM60N 意法半导体 | 功能相似 | STB21NM60ND和STW24NM60N的区别 |