N 通道 MDmesh™,500V,STMicroelectronics### MOSFET 晶体管,STMicroelectronics
N 通道 MDmesh™,500V,STMicroelectronics
立创商城:
STB32NM50N
得捷:
MOSFET N CH 500V 22A D2PAK
欧时:
STMicroelectronics MDmesh 系列 Si N沟道 MOSFET STB32NM50N, 22 A, Vds=500 V, 3引脚 D2PAK TO-263封装
e络盟:
晶体管, MOSFET, N沟道, 22 A, 500 V, 0.1 ohm, 10 V, 3 V
艾睿:
As an alternative to traditional transistors, the STB32NM50N power MOSFET from STMicroelectronics can be used to both amplify and switch electronic signals. Its maximum power dissipation is 190000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with mdmesh technology.
安富利:
Trans MOSFET N-CH 500V 22A 3-Pin2+Tab D2PAK T/R
Chip1Stop:
Trans MOSFET N-CH 500V 22A 3-Pin2+Tab D2PAK T/R
Verical:
Trans MOSFET N-CH 500V 22A 3-Pin2+Tab D2PAK T/R
儒卓力:
**N-CH 500V 22A 100mOhm TO263 **
力源芯城:
500V,22A,N沟道MOSFET
DeviceMart:
MOSFET N CH 500V 22A D2PAK
通道数 1
针脚数 3
漏源极电阻 0.1 Ω
耗散功率 190 W
阈值电压 4 V
漏源极电压Vds 500 V
上升时间 9.5 ns
输入电容Ciss 1973pF @50VVds
下降时间 23.6 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 190W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.4 mm
宽度 9.35 mm
高度 4.6 mm
封装 TO-263-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STB32NM50N ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
IPB50R140CP 英飞凌 | 功能相似 | STB32NM50N和IPB50R140CP的区别 |
STP32NM50N 意法半导体 | 功能相似 | STB32NM50N和STP32NM50N的区别 |