STU7N80K5

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STU7N80K5概述

N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics### MOSFET 晶体管,STMicroelectronics

N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics


得捷:
MOSFET N-CH 800V 6A IPAK


立创商城:
N沟道 800V 6A


欧时:
STMicroelectronics MDmesh K5, SuperMESH5 系列 Si N沟道 MOSFET STU7N80K5, 6 A, Vds=800 V, 3引脚 IPAK TO-251封装


贸泽:
MOSFET N-Ch 800 V 0.95 Ohm 6 A Zener-protecte


艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the STU7N80K5 power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 110000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes supermesh technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.


安富利:
Trans MOSFET N-CH 800V 6A 3-Pin TO-251 Tube


Chip1Stop:
Trans MOSFET N-CH 800V 6A Tube


Verical:
Trans MOSFET N-CH 800V 6A 3-Pin3+Tab IPAK Tube


Win Source:
MOSFET N CH 800V 6A IPAK


DeviceMart:
MOSFET N CH 800V 6A IPAK


STU7N80K5中文资料参数规格
技术参数

通道数 1

漏源极电阻 950 mΩ

极性 N-CH

耗散功率 110 W

阈值电压 4 V

漏源极电压Vds 800 V

漏源击穿电压 800 V

连续漏极电流Ids 6A

上升时间 8.3 ns

输入电容Ciss 360pF @100VVds

额定功率Max 110 W

下降时间 20.2 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 110W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-251-3

外形尺寸

长度 6.6 mm

宽度 2.4 mm

高度 6.2 mm

封装 TO-251-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买STU7N80K5
型号: STU7N80K5
描述:N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
替代型号STU7N80K5
型号/品牌 代替类型 替代型号对比

STU7N80K5

ST Microelectronics 意法半导体

当前型号

当前型号

STD7N80K5

意法半导体

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