





N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics### MOSFET 晶体管,STMicroelectronics
N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics
得捷:
MOSFET N-CH 800V 6A IPAK
立创商城:
N沟道 800V 6A
欧时:
STMicroelectronics MDmesh K5, SuperMESH5 系列 Si N沟道 MOSFET STU7N80K5, 6 A, Vds=800 V, 3引脚 IPAK TO-251封装
贸泽:
MOSFET N-Ch 800 V 0.95 Ohm 6 A Zener-protecte
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the STU7N80K5 power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 110000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes supermesh technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 800V 6A 3-Pin TO-251 Tube
Chip1Stop:
Trans MOSFET N-CH 800V 6A Tube
Verical:
Trans MOSFET N-CH 800V 6A 3-Pin3+Tab IPAK Tube
Win Source:
MOSFET N CH 800V 6A IPAK
DeviceMart:
MOSFET N CH 800V 6A IPAK
通道数 1
漏源极电阻 950 mΩ
极性 N-CH
耗散功率 110 W
阈值电压 4 V
漏源极电压Vds 800 V
漏源击穿电压 800 V
连续漏极电流Ids 6A
上升时间 8.3 ns
输入电容Ciss 360pF @100VVds
额定功率Max 110 W
下降时间 20.2 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 110W Tc
安装方式 Through Hole
引脚数 3
封装 TO-251-3
长度 6.6 mm
宽度 2.4 mm
高度 6.2 mm
封装 TO-251-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STU7N80K5 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STD7N80K5 意法半导体 | 功能相似 | STU7N80K5和STD7N80K5的区别 |
STP7N80K5 意法半导体 | 功能相似 | STU7N80K5和STP7N80K5的区别 |