N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics
N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics
### MOSFET ,STMicroelectronics
得捷:
MOSFET N-CH 800V 2A IPAK
立创商城:
N沟道 800V 2A
欧时:
### N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics### MOSFET 晶体管,STMicroelectronics
贸泽:
MOSFET N-channel 800 V, 3.5 Ohm typ., 2 A MDmesh K5 Power MOSFET in IPAK package
e络盟:
晶体管, MOSFET, N沟道, 2 A, 800 V, 3.5 ohm, 10 V, 4 V
艾睿:
If you need to either amplify or switch between signals in your design, then STMicroelectronics&s; STU2N80K5 power MOSFET is for you. Its maximum power dissipation is 45000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with supermesh 5 technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans MOSFET N-CH 800V 2A 3-Pin IPAK Tube
Chip1Stop:
Trans MOSFET N-CH 800V 2A 3-Pin3+Tab IPAK Tube
Verical:
Trans MOSFET N-CH 800V 2A 3-Pin3+Tab IPAK Tube
儒卓力:
**N-CH 800V 2A 4500mOhm TO251 **
针脚数 3
漏源极电阻 3.5 Ω
耗散功率 45 W
阈值电压 4 V
漏源极电压Vds 800 V
上升时间 12 ns
输入电容Ciss 105pF @100VVds
下降时间 32 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 45W Tc
安装方式 Through Hole
引脚数 3
封装 TO-251-3
长度 6.6 mm
宽度 2.4 mm
高度 6.2 mm
封装 TO-251-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 无铅
ECCN代码 EAR99